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DATA SHEET
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE3510M04
L TO S BAND LOW NOISE AMPLIFIER
N-CHANNEL HJ-FET
Document No. PG10676EJ01V0DS (1st edition)
Date Published July 2007 NS
2007
FEATURES
? Low noise figure and high associated gain
NF = 0.45 dB TYP., Ga
= 16 dB TYP. @ f = 4 GHz, VDS
= 2 V, I
D
= 15 mA
NF = 0.35 dB TYP., Ga
= 19 dB TYP. @ f = 2 GHz, VDS
= 2 V, I
D
= 10 mA (Reference only)
? Flat-lead 4-pin thin-type super minimold (M04) package
APPLICATIONS
? Satellite radio (SDARS, DMB, etc.) antenna LNA
? Low noise amplifier for microwave communication system
ORDERING INFORMATION
Part Number Order Number Package Quantity Marking Supplying Form
V81
50
pcs
(Non
reel)
NE3510M04-A
NE3510M04
NE3510M04-T2 NE3510M04-T2-A
Flat-lead 4-pin thin-
type super minimold
3 kpcs/reel
(M04) (Pb-Free)
? 8 mm wide embossed taping
? Pin 1 (Source), Pin 2 (Drain) face
the perforation side of the tape
Remark
To order evaluation samples, contact your nearby sales office.
Part number for sample order: NE3510M04-A
ABSOLUTE MAXIMUM RATINGS (TA
= +25CC)
Parameter Symbol Ratings Unit
Drain to Source Voltage VDS
4.0 V
Gate to Source Voltage VGS
[3.0 V
ID
Drain
Current
IDSS
mA
IG
Gate
Current
140
JA
Total Power Dissipation P
Note
tot
125 mW
Channel Temperature Tch
+150
CC
Storage Temperature Tstg
[65 to +150
CC
Note
Mounted on 1.08 cm
2
1.0 mm (t) glass epoxy PCB
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